july 1998 fzt 6 49 n pn low saturation transistor these devices are designed with high current gain and low saturation voltage with co llector currents up to 3a con tinuous. absolute maximum ratings* t a = 25c unless otherwise noted c -55 to +150 operating and storage junction temperature range t j, t stg a 3 collector current - continuous i c v 5 emitter-base voltage v ebo v 35 collector-base voltage v cbo v 25 collector-emitter voltage v ceo units f zt 6 49 parameter symbol *these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle ope rations. thermal characteristics t a = 25c unless otherwise noted c/w 62.5 thermal resistance, junction to ambient r q ja w 2 total device dissipation p d fzt 6 49 units max characteristic symbol page 1 of 2 ? 1998 fairchild semiconductor corporation fzt 6 49 .lwp p r nc 7/10/98 rev b c e c b sot-223 fzt649 discrete power & signal technologies
- 150 i c = 100 ma,v ce = 5 v, f= 10 0mhz transi tion frequ enc y f t pf 50 v cb = 10 v, i e = 0, f = 1mhz output capacitance c o bo small signal characteristics v 1 i c = 1 a, v ce = 2 v base-emitter on voltage v be(on) v 1.25 i c = 1 a, i b = 100 ma base-emitter saturation voltage v be( sat ) mv 300 600 i c = 1 a, i b = 100 ma i c = 3 a, i b = 300 ma collector-emitter saturation voltage v ce(sat) - 300 70 100 75 15 i c = 50 ma, v ce = 2 v i c = 1 a, v ce = 2 v i c = 2 a, v ce = 2 v i c = 6 a, v ce = 2 v dc current gain h fe on characteristics * n a 100 v eb = 4v emitter cutoff current i ebo n a ua 100 10 v cb = 30 v v cb = 30 v, t a =100 c collector cutoff current i cbo v 5 i e = 100 m a emitter-base breakdown voltage bv ebo v 35 i c = 100 m a collector-base breakdown voltage bv cbo v 25 i c = 10 ma collector-emitter breakdown voltage bv ceo off characteristics units max min test conditions parameter symbol n pn low saturation transi stor (continued) electrical characteristics t a = 25c unless otherwise noted *pulse test: pulse width 300 m s, duty cycle 2.0% page 2 of 2 ? 1998 fairchild semiconductor corporation fzt 6 49 .lwp p r nc 7/10/98 rev b fzt649
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